參數(shù)資料
型號(hào): AP4511GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 15 A, 35 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-5
文件頁數(shù): 3/7頁
文件大?。?/td> 106K
代理商: AP4511GH
AP4511GH
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Reference to 25
,I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
Test Conditions
Min.
-35
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.03
-
-
-
10
-
-
-
10
2
6
10
6
26
7
690
165
130
5
Max. Units
-
-
48
70
-3
-
-1
-25
±
100
V
GS
=0V, I
D
=-250uA
V
Δ
B
V
DSS
/
Δ
T
j
V/
m
Ω
m
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS
=-10V, I
D
=-6A
V
GS
=-4.5V, I
D
=-4A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-6A
V
DS
=-35V, V
GS
=0V
V
DS
=-28V, V
GS
=0V
V
GS
=±20V
I
D
=-6A
V
DS
=-28V
V
GS
=-4.5V
V
DS
=-18V
I
D
=-1A
R
G
=3.3
Ω
,V
GS
=-10V
R
D
=18
Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
19
-
-
-
-
-
-
1100
-
-
7.5
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
20
12
Max. Units
-1.2
-
-
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
I
S
=-6A, V
GS
=0V
I
S
=-6A, V
GS
=0V
dI/dt=-100A/μs
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
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