參數(shù)資料
型號: AP4511GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 15 A, 35 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-5
文件頁數(shù): 2/7頁
文件大小: 106K
代理商: AP4511GH
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
35
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.03
-
V/
R
DS(ON)
V
GS
=10V, I
D
=8A
-
-
30
m
Ω
V
GS
=4.5V, I
D
=6A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=8A
V
DS
=35V, V
GS
=0V
V
DS
=28V, V
GS
=0V
V
GS
=±20V
I
D
=8A
V
DS
=28V
V
GS
=4.5V
V
DS
=18V
I
D
=1A
R
G
=3.3
Ω
,
V
GS
=10V
R
D
=18
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
-
1
-
-
-
-
40
3
-
1
m
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
13
-
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
11
3
6
12
7
22
6
830
150
110
1.1
18
-
-
-
-
-
-
1330
-
-
1.7
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
18
12
Max.
1.2
-
-
Units
V
ns
nC
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
I
S
=8A, V
GS
=0V
I
S
=8A, V
GS
=0V
dI/dt=100A/μs
AP4511GH
±
100
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