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參數(shù)資料
| 型號： | AP4407GR |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強型功率MOSFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | AP4407GR |
AP4407GR
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
14
0
20
40
60
80
Q
G
, Total Gate Charge (nC)
-
G
I
D
= -24A
V
DS
= -24V
1
10
100
1000
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.00001
0.1
1
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
相關PDF資料 |
PDF描述 |
|---|---|
| AP4407M | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4407P | P-CHANNEL ENHANCEMENT MODE |
| AP4407S | P-CHANNEL ENHANCEMENT MODE |
| AP4409GEM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4409GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP4407GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP4407I | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4407I-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Fast Switching Characteristic |
| AP4407M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4407P | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
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