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參數(shù)資料
| 型號： | AP4224M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強型功率MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | AP4224M |
AP4224M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
30
60
90
120
150
180
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
20
40
60
80
100
120
140
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
8
10
12
14
16
18
20
3
5
7
9
11
V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=7A
T
A
=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=10A
V
G
=10V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
G
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PDF描述 |
|---|---|
| AP4226AGM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226D | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4228GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP4224PP | 功能描述:電氣外殼配件 RoHS:否 制造商:Hammond Manufacturing 產(chǎn)品:Rack Accessories 類型: 面板寬度: 面板高度: 外部寬度: 外部高度: 外部深度: 顏色:Black |
| AP4226AGM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226BGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP4226D | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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