參數(shù)資料
型號(hào)： AP40T03GI
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： 28 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT, TO-220CFM, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 82K
代理商： AP40T03GI
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
-
0.02
-
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=18A
-
-
25
m
Ω
V
GS
=4.5V, I
D
=14A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=18A
V
DS
=30V, V
GS
=0V
V
DS
=24V ,V
GS
=0V
V
GS
= ±25V
I
D
=18A
V
DS
=25V
V
GS
=4.5V
V
DS
=15V
I
D
=18A
R
G
=3.3
Ω
,
V
GS
=10V
R
D
=0.83
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
-
-
45
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
-
1
25
±100
15
-
-
-
-
-
-
980
-
-
2.3
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
16
-
-
-
9
2
6
7
56
16
5
610
160
117
1.5
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
20
10
Max.
1.3
-
-
Units
V
ns
nC
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
I
S
=18A, V
GS
=0V
I
S
=14A, V
GS
=20V
dI/dt=100A/μs
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP40T03GI
相關(guān)PDF資料
PDF描述
AP40T03GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03J N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03S N-CHANNEL ENHANCEMENT MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP40T03GJ 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GJ-HF-3TB 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 25MOHM TO-251 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-251 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-251, Transistor Polarity:N Channel, Continuous Drai
AP40T03GP 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GS 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03H 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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