參數(shù)資料
型號: AP40T03S
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: N-CHANNEL ENHANCEMENT MODE
中文描述: N溝道增強(qiáng)模式
文件頁數(shù): 1/6頁
文件大?。?/td> 91K
代理商: AP40T03S
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching
BV
DSS
R
DS(ON)
I
D
25V
25m
Ω
28A
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=100
I
DM
P
D
@T
A
=25
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
4.0
62
Unit
/W
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data and specifications subject to change without notice
200127031
AP40T03S/P
Parameter
Rating
25
± 25
28
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
24
95
31.25
0.25
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Parameter
G
D
S
GDS
TO-263
TO-220
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03P) are available for low-profile applications.
GDS
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