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參數(shù)資料
| 型號： | AP3303H |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | AP3303H |
AP2310GN
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
2
4
6
8
10
0
1
V
DS
, Drain-to-Source Voltage (V)
2
3
4
5
I
D
T
A
=150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
75
81
87
93
99
105
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=2A
T
A
=25
o
C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=3A
V
G
=10V
0
1
2
3
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
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|---|---|
| AP3303J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310J | P-CHANNEL ENHANCEMENT MODE |
| AP3310H | P-CHANNEL ENHANCEMENT MODE |
| AP3402GEH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3402GEJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP3303J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310GH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, 2.5V Gate Drive Capability |
| AP3310GHJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310GJ-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Simple Drive Requirement |
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