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參數(shù)資料
| 型號(hào)： | AP30N30W |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 36 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 120K |
| 代理商： | AP30N30W |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
250
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.24
-
V/
℃
R
DS(ON)
V
GS
=10V, I
D
=15A
-
-
68
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=15A
V
DS
=250V, V
GS
=0V
V
DS
=200V ,V
GS
=0V
V
GS
= ±30V
I
D
=15A
V
DS
=200V
V
GS
=10V
V
DS
=125V
I
D
=15A
R
G
=10
Ω
,
V
GS
=10V
R
D
=8.3
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
1.5
-
3.5
V
Forward Transconductance
-
23
-
S
uA
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
10
Drain-Source Leakage Current (T
j
=150
o
C)
-
-
100
uA
I
GSS
Gate-Source Leakage
Total Gate Charge
2
-
-
±1
uA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Source-Drain Diode
Symbol
-
63
100
nC
Gate-Source Charge
-
19
-
nC
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
-
14
-
nC
-
28
-
ns
Rise Time
-
36
-
ns
Turn-off Delay Time
-
84
-
ns
Fall Time
-
45
-
ns
Input Capacitance
-
4290
6900
pF
Output Capacitance
-
550
-
pF
Reverse Transfer Capacitance
-
6
-
pF
Gate Resistance
f=1.0MHz
-
1.9
3
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
V
SD
t
rr
Q
rr
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=36A, V
GS
=0V
I
S
=15A, V
GS
=0V
dI/dt=100A/μs
-
-
1.5
-
235
-
ns
Reverse Recovery Charge
-
2.24
-
μC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting T
j
=25
o
C , V
DD
=50V , L=1mH , R
G
=25
Ω
, I
AS
=30A.
2/4
AP30N30W
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