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參數(shù)資料
| 型號： | AOD464L |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 125K |
| 代理商： | AOD464L |
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
15
45
1
Max
18
55
1.5
R
θ
JC
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
W
T
A
=70°C
1.5
Junction and Storage Temperature Range
-55 to 175
°C
Power Dissipation
A
T
A
=25°C
P
DSM
2.3
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
20
200
100
50
A
mJ
A
T
C
=100°C
28
80
Pulsed Drain Current
C
Continuous Drain
Current
T
C
=25°C
I
D
40
Drain-Source Voltage
Gate-Source Voltage
105
±25
V
V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Maximum
Units
R
θ
JA
Power Dissipation
B
T
C
=25°C
T
C
=100°C
P
D
W
AOD464
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 105V
I
D
= 40 A (V
GS
=10V)
R
DS(ON)
< 28 m
(V
GS
=10V) @ 20A
R
DS(ON)
< 31 m
(V
GS
= 6V)
General Description
The AOD464 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard Product AOD464 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD464L is a Green Product ordering option. AOD464
and AOD464L are electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AOD466 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD466L | N-Channel Enhancement Mode Field Effect Transistor |
| AOD472 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD472L | N-Channel Enhancement Mode Field Effect Transistor |
| AOD476 | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOD466 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD466_08 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD466L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD468 | 功能描述:MOSFET N CH 300V 11.5A TO252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AOD472 | 功能描述:MOSFET N-CH 25V 55A TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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