參數(shù)資料
型號: AOD466
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強型場效應管
文件頁數(shù): 1/5頁
文件大?。?/td> 131K
代理商: AOD466
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
15
41
3.6
Max
20
50
5
R
θ
JC
W
T
A
=70°C
1.6
Power Dissipation
A
T
A
=25°C
P
DSM
2.5
Repetitive avalanche energy 0.1mH
C
20
30
15
A
mJ
Junction and Storage Temperature Range
A
P
D
°C
-55 to 175
T
C
=100°C
Avalanche Current
C
20
I
D
30
25
70
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
Maximum
25
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±20
Gate-Source Voltage
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Steady-State
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
t
10s
R
θ
JA
AOD466
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 25V
I
D
= 30A (V
GS
= 10V)
R
DS(ON)
< 14 m
(V
GS
= 10V)
R
DS(ON)
< 24 m
(V
GS
= 4.5V)
General Description
The AOD466 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard
Product AOD466 is Pb-free (meets ROHS & Sony
259 specifications). AOD466L is a Green Product
ordering option. AOD466 and AOD466L are
electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
相關PDF資料
PDF描述
AOD466L N-Channel Enhancement Mode Field Effect Transistor
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相關代理商/技術參數(shù)
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AOD466_08 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
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