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參數(shù)資料
| 型號： | AO9926A |
| 廠商： | ALPHA |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:8; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-8 RoHS Compliant: No |
| 中文描述： | 雙N溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 293K |
| 代理商： | AO9926A |
AO9926A
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
0.8
nA
V
A
0.3
30
0.5
21.6
29.2
26.4
33.3
22
0.76
26
36
33
42
T
J
=125°C
V
GS
=2.5V, I
D
=5A
V
GS
=1.8V, I
D
=4A
V
DS
=5V, I
D
=5A
I
S
=1A
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
1050
163
129
4
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
15.2
1
4
6.5
9
56.5
13.2
21
7.1
nC
nC
nC
ns
ns
ns
ns
ns
nC
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge
I
F
=5A, dI/dt=100A/
μ
s
I
F
=5A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
V
DS
=16V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=7A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=10V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=4.5V, V
DS
=10V, I
D
=7A
V
GS
=5V, V
DS
=10V, R
L
=1.5
,
R
GEN
=3
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
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