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參數(shù)資料
| 型號(hào)： | AO8820 |
| 廠商： | ALPHA |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 常見(jiàn)的漏雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 163K |
| 代理商： | AO8820 |
AO8820
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
10
μ
A
±12
0.5
25
V
V
A
0.65
1
16.5
23.1
19
25
35
25
0.75
2.5
21
T
J
=125°C
24
32
50
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
S
V
A
1
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
615
pF
150
120
0.9
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
8.5
1.2
3
7
13
29
11
12
nC
nC
nC
ns
ns
ns
ns
15
5
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=7A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=16V, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=7A
Reverse Transfer Capacitance
Gate resistance
I
F
=7A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
μ
A
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=±10V
V
DS
=0V, I
G
=±250uA
Gate-Body leakage current
Gate-Source Breakdown Voltage
V
GS
=1.8V, I
D
=2A
V
DS
=5V, I
D
=7A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=5V, V
DS
=10V, R
L
=1.4
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=10V, I
D
=7A
Turn-On DelayTime
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=2.5V, I
D
=5.5A
I
S
=1A,V
GS
=0V
V
GS
=4.5V, I
D
=6.6A
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 0: June 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
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