參數(shù)資料
型號： AO4442
廠商： ALPHA
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： N溝道增強型場效應管
文件頁數(shù)： 2/4頁
文件大?。?/td> 229K
代理商： AO4442
AO4442
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
75
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
3
nA
V
A
1
2.4
20
100
180
120
8.2
0.79
130
220
165
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
1
10
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
303
37
17
2.2
350
pF
pF
pF
3
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
5.2
2.46
1
1.34
4.5
2.3
15.6
1.9
22
22
6.5
3.5
nC
nC
nC
nC
ns
ns
ns
ns
30
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Charge I
F
=3.1A, dI/dt=100A/
μ
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=37.5V, R
L
=12
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
Total Gate Charge
V
GS
=10V, V
DS
=37.5V, I
D
=3.1A
Gate Source Charge
Gate Drain Charge
m
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=3.1A
V
GS
=4.5V, I
D
=2A
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
,
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=3.1A
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
I
D
=10mA, V
GS
=0V
I
F
=3.1A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=37.5V, f=1MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 1 : Sept 2005
Alpha & Omega Semiconductor, Ltd.
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AO4442L N-Channel Enhancement Mode Field Effect Transistor
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