- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375331 > AO4438 (ALPHA) N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | AO4438 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | AO4438 |
AO4438
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
60
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
3
nA
V
A
1
40
2.2
16.3
30
20
24
0.74
22
40
27
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
1920
155
116
0.65
2300
pF
pF
pF
0.8
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
47.6
24.2
6
14.4
8.2
5.5
29.7
5.2
34
53
58
30
nC
nC
nC
nC
ns
ns
ns
ns
41
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
V
GS
=0V, V
DS
=30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
I
S
=1A,V
GS
=0V
V
GS
=10V, I
D
=8.2A
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
GS
=10V, V
DS
=30V, R
L
=3.6
,
R
GEN
=3
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=30V, I
D
=8.2A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
V
GS
=4.5V, I
D
=7.6A
V
DS
=5V, I
D
=8.2A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
= ±20V
Drain-Source Breakdown Voltage
I
D
=250
μ
A, V
GS
=0V
V
DS
=48V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
N Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Charge
I
F
=8.2A, dI/dt=100A/
μ
s
Body Diode Reverse Recovery Time
I
F
=8.2A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 2 :Sept 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4438L | N-Channel Enhancement Mode Field Effect Transistor |
| AO4440 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4440L | N-Channel Enhancement Mode Field Effect Transistor |
| AO4441 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4441L | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4438_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:60V N-Channel MOSFET |
| AO4438_101 | 功能描述:MOSFET N-CHANNEL 60V 8.2A 8SO 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:8.2A（Ta） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:30nC @ 4.5V Vgs（最大值）:±20V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:2300pF @ 30V FET 功能:- 功率耗散（最大值）:3.1W（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:22 毫歐 @ 8.2A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:8-SO 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 標(biāo)準(zhǔn)包裝:3,000 |
| AO4438L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4440 | 功能描述:MOSFET N-CH 60V 5A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4440_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:60V N-Channel MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。