參數(shù)資料
型號: AO4440L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強型場效應管
文件頁數(shù): 1/4頁
文件大?。?/td> 118K
代理商: AO4440L
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
38
69
24
Max
50
80
30
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
W
T
A
=70°C
1.6
Junction and Storage Temperature Range
-55 to 150
°C
Power Dissipation
T
A
=25°C
P
D
2.5
A
T
A
=70°C
4
Pulsed Drain Current
B
20
Continuous Drain
Current
A
T
A
=25°C
I
D
5
Drain-Source Voltage
Gate-Source Voltage
60
±20
V
V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Maximum
Units
AO4440
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 5A (V
GS
= 10V)
R
DS(ON)
< 55m
(V
GS
= 10V)
R
DS(ON)
< 75m
(V
GS
= 4.5V)
General Description
The AO4440 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO4440 is Pb-free
(meets ROHS & Sony 259 specifications). AO4440L
is a Green Product ordering option. AO4440 and
AO4440L are electrically identical
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
相關PDF資料
PDF描述
AO4441 P-Channel Enhancement Mode Field Effect Transistor
AO4441L P-Channel Enhancement Mode Field Effect Transistor
AO4442 N-Channel Enhancement Mode Field Effect Transistor
AO4442L N-Channel Enhancement Mode Field Effect Transistor
AO4443 P-Channel Enhancement Mode Field Effect Transistor
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