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參數(shù)資料
AO4425
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-38
V
-100
-500
±1
±10
-3.5
T
J
=55°C
μ
A
μ
A
V
GS(th)
I
D(ON)
-2
-50
-2.5
V
A
7.7
11
8.8
43
0.71
10
13.5
11
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
1
4.2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
3800
560
350
7.5
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
63
14.1
16.1
12.4
9.2
97.5
45.5
35
33
nC
nC
nC
ns
ns
ns
ns
ns
nC
-15
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-20V, R
L
=1.35
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Diode Forward Voltage
m
V
GS
=-10V, I
D
=-14A
V
DS
=-5V, I
D
=-14A
I
S
=-1A,V
GS
=0V
I
DSS
nA
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-20V, I
D
=-14A
V
DS
=-30V, V
GS
=0V
Zero Gate Voltage Drain Current
I
GSS
Gate-Body leakage current
V
DS
=0V, V
GS
=±20V
V
DS
=0V, V
GS
=±25V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Charge
I
F
=-14A, dI/dt=100A/
μ
s
I
D
=-250
μ
A, V
GS
=0V
I
F
=-14A, dI/dt=100A/
μ
s
Forward Transconductance
Body Diode Reverse Recovery Time
V
GS
=0V, V
DS
=-20V, f=1MHz
V
GS
=-10V, V
DS
=-20V, I
D
=-14A
R
DS(ON)
Static Drain-Source On-Resistance
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 1 : July 2005
≤
10s thermal resistance rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
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