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參數(shù)資料
| 型號： | AMMC-6630-W10 |
| 元件分類： | 衰減器 |
| 英文描述： | 5000 MHz - 45000 MHz RF/MICROWAVE VARIABLE ATTENUATOR |
| 封裝： | ROHS COMPLIANT PACKAGE |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 898K |
| 代理商： | AMMC-6630-W10 |
10
Figure 18. AMMC-6630 simplified schematic
AMMC-6630 Bias and Usage
The recommended DC control voltage range is Vc=0 to
1 volt. Simplified schematic for the MMIC die is shown in
Figure 18.
RFin
Vc
RFout
AMMC-6630 Assembly Techniques
The backside of the MMIC chip is RF ground. For micro-
strip applications the chip should be attached directly to
the ground plane (e.g. circuit carrier or heatsink) using
electrically conductive epoxy [1].
For best performance, the topside of the MMIC should
be brought up to the same height as the circuit sur-
rounding it. This can be accomplished by mounting a
gold plated metal shim (same length as the MMIC) under
the chip which is of correct thickness to make the chip
and adjacent circuit the same height. The amount of
epoxy used for the chip or shim attachment should be
just enough to provide a thin fillet around the bottom
perimeter of the chip. The ground plane should be free of
any residue that may jeopardize electrical or mechanical
attachment.
RF connections should be kept as short as reasonable to
minimize performance degradation due to undesirable
series inductance. A single bond wire is normally sufficient
for signal connections, however double bonding with
0.7mil gold wire will reduce series inductance. Gold
thermo-sonic wedge bonding is the preferred method
for wire attachment to the bond pads. The recommend-
ed wire bond stage temperature is 150°C +/- 2°C. Caution
should be taken to not exceed the Absolute Maximum
Rating for assembly temperature and time.
The chip is 100um thick and should be handled with
care. Even though this MMIC has 4550 Angstroms of
silicon nitride covering the air bridges on the top surface
of the die, it should be handled by the edges or with a
custom collet (do not pick up the die with a vacuum on
die center). Bonding pads and chip backside metalliza-
tion are gold. For further assembly information please see
Avago application note# 5409.
This MMIC is static sensitive and ESD precautions should
be taken.
50V Machine Model
250V Human Body Model
Class 0A
Notes:
1. Ablebond 84-1 LMI silver epoxy is recommended.
Ordering Information:
AMMC-6630-W10 = 10 devices per tray
AMMC-6630-W50 = 50 devices per tray
Figure 19. AMMC-6630 Bond Pad Locations
Figure 20. Assembly BondDiagram
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PDF描述 |
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| AMMC-6630-W50 | 5000 MHz - 45000 MHz RF/MICROWAVE VARIABLE ATTENUATOR |
| AMMC-6640 | 0 MHz - 50000 MHz RF/MICROWAVE VARIABLE ATTENUATOR |
| AMMP-5024-BLKG | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMP-5024-TR1G | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMP-5024-TRG | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AMMC-6630-W50 | 功能描述:有源衰減器 Attenuator Chip DC-30GHz RoHS:否 制造商:TriQuint Semiconductor 通道數(shù)量: 最大頻率: 阻抗: 最大 VSWR: 位數(shù): 最大工作溫度: 最小工作溫度: |
| AMMC-6640-W10 | 功能描述:有源衰減器 Attenuator Chip DC-40GHz RoHS:否 制造商:TriQuint Semiconductor 通道數(shù)量: 最大頻率: 阻抗: 最大 VSWR: 位數(shù): 最大工作溫度: 最小工作溫度: |
| AMMC-6640-W50 | 功能描述:有源衰減器 Attenuator Chip DC-40GHz RoHS:否 制造商:TriQuint Semiconductor 通道數(shù)量: 最大頻率: 阻抗: 最大 VSWR: 位數(shù): 最大工作溫度: 最小工作溫度: |
| AMMC-6650-W10 | 功能描述:有源衰減器 Attenuator DC-45GHz RoHS:否 制造商:TriQuint Semiconductor 通道數(shù)量: 最大頻率: 阻抗: 最大 VSWR: 位數(shù): 最大工作溫度: 最小工作溫度: |
| AMMC-6650-W50 | 功能描述:有源衰減器 Attenuator DC-45GHz RoHS:否 制造商:TriQuint Semiconductor 通道數(shù)量: 最大頻率: 阻抗: 最大 VSWR: 位數(shù): 最大工作溫度: 最小工作溫度: |
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