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參數(shù)資料
| 型號： | AMMC-6232-W10 |
| 元件分類： | 放大器 |
| 英文描述： | 18000 MHz - 32000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | DIE |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 1484K |
| 代理商： | AMMC-6232-W10 |
Assembly Techniques
ThebacksideoftheMMICchipisRFground.Formicrostrip
applications the chip should be attached directly to
the ground plane (e.g. circuit carrier or heatsink) using
electricallyconductiveepoxy[1,2].
Forbestperformance,thetopsideoftheMMICshouldbe
broughtuptothesameheightasthecircuitsurrounding
it.Thiscanbeaccomplishedbymountingagoldplated
metal shim (same length as the MMIC) under the chip
whichisofcorrectthicknesstomakethechipandadjacent
circuitthesameheight.Theamountofepoxyusedfor
the chip or shim attachment should be just enough to
provideathinfilletaroundthebottomperimeterofthe
chip.Thegroundplaneshouldbefreeofanyresiduethat
mayjeopardizeelectricalormechanicalattachment.
RFconnectionsshouldbekeptasshortasreasonableto
minimize performance degradation due to undesirable
seriesinductance.Asinglebondwireisnormallysufficient
for signal connections, however double bonding with
0.7mil gold wire will reduce series inductance. Gold
thermo-sonic wedge bonding is the preferred method
forwireattachmenttothebondpads.Therecommended
wirebondstagetemperatureis150°c±2°c.
Figure 22. Bond Pad Locations
Caution should be taken to not exceed the Absolute
MaximumRatingforassemblytemperatureandtime.
Thechipis100umthickandshouldbehandledwithcare.
ThisMMIChasexposedairbridgesonthetopsurfaceand
shouldbehandledbytheedgesorwithacustomcollet
(do not pick up the die with a vacuum on die center).
Bondingpadsandchipbacksidemetallizationaregold.
This MMIC is also static sensitive and ESD precautions
shouldbetaken
Notes:
1. Ablebond84-1LMIsilverepoxyisrecommended.
2. Eutecticattachisnotrecommendedandmayjeopardizereliabilityof
thedevice.
Ordering Information:
AMMC-6232-W10=10devicespertray
AMMC-6232-W50=50devicespertray
0
410
800
0
875
1370
1510
2000
800
425
0
1600
650
130
1470
RFin
RFout
VD1
VD2
725
275
290
VG1
VG2
660
540
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright 200-2008 Avago Technologies Limited. All rights reserved. Obsoletes AV0-00EN
AV02-29EN - June 2, 2008
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PDF描述 |
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| AMMC-6232-W50 | 18000 MHz - 32000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
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| AMMC-6241-W50 | 26000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMP-6442-TR1 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AMMC-6232-W50 | 功能描述:射頻放大器 LNA 18-32GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-6233 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:18 to 32 GHz GaAs Low Noise Amplifier |
| AMMC-6233-W10 | 功能描述:射頻放大器 LNA MMIC 18-31GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-6233-W50 | 功能描述:射頻放大器 LNA MMIC 18-31GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-6241 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:26-43 GHz Low Noise Amplifier |
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