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參數(shù)資料
| 型號： | AMMC-6232-W10 |
| 元件分類： | 放大器 |
| 英文描述： | 18000 MHz - 32000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | DIE |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 1484K |
| 代理商： | AMMC-6232-W10 |
AMMC-6232 Application and Usage
Biasing and Operation
TheAMMC-6232isnormallybiasedwithapositivedrain
supply connected to the VD1 and VD2 pads through
bypass capacitor as shown in Figures 15 and 16. The
recommendeddrainvoltageandgatevoltageforgeneral
usage is 4V and -0.95V respectively. With Vdd=4V, Vg=-
0.95V, the corresponding drain current is approximately
135mA. It is important to have at least 0.1upF bypass
capacitor and the capacitor should be placed as close
to the component as possible. Aspects of the amplifier
performancemaybeimprovedoveranarrowerbandwidth
by application of additional conjugate, linearity, or low
noise(
Topt)matching.
After adjusting the gate bias to obtain 135mA at Vdd
= 4V, the AMMC-6232 can be safely biased at Vdd=
3V or 5V (while fixing the gate bias) as desired. At 4V,
the performance is an optimal compromise between
powerconsumption,gainandpower/linearity.Itisboth
applicabletobeusedasalownoiseblockordriver.At3V,
theamplifierisidealasafrontendlownoiseblockwhere
linearity is not highly required. At 5V, the amplifier can
provide~2dBmoreoutputpowerforLOortransmitter
driverapplicationswherehighoutputpowerandlinearity
areoftenrequired.
The two gate voltages can be combined as shown in
Figure15orseparatedasinFigure16.Combiningthetwo
gate voltages simplifies the usage whereas separating
themprovidesflexibilitytooverallbiasingscheme.
Inbothcases,bondingwiresattheinputandoutputin
therangeof0.15nHwouldlikelyimprovetheoverallNoise
Figureandinput,outputmatchatmostfrequencies.
Nogroundwiresareneededbecausegroundconnection
ismadewithplatedthrough-holestothebacksideofthe
substrate.
RF INPUT
RF OUTPUT
VD1
V
D2
0.1 uF Capacitor
To VDD DC supply
AMMC-6232
To VGate DC supply
Gold Plated Shim (Optional)
To VDD DC supply
RF INPUT
RF OUTPUT
VD1
V
D2
0.1 uF Capacitor
AMMC-6232
To V
G2 DC supply
To VG1 DC supply
Figure 19. Gate Bias Combined Together
Figure 20. Separated Gate Bias
Figure 21. Simplified High Linearity LNA Schematic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AMMC-6232-W50 | 18000 MHz - 32000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AMMC-6241-W10 | 26000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMC-6241-W50 | 26000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMP-6442-TR1 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMP-6442-TR2 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AMMC-6232-W50 | 功能描述:射頻放大器 LNA 18-32GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-6233 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:18 to 32 GHz GaAs Low Noise Amplifier |
| AMMC-6233-W10 | 功能描述:射頻放大器 LNA MMIC 18-31GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-6233-W50 | 功能描述:射頻放大器 LNA MMIC 18-31GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-6241 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:26-43 GHz Low Noise Amplifier |
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