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參數(shù)資料
| 型號(hào)： | AMMC-5040-W50 |
| 元件分類： | 放大器 |
| 英文描述： | 20000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.0677 X 0.0299 INCH, 0.004 INCH HEIGHT, DIE |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 279K |
| 代理商： | AMMC-5040-W50 |
3
AMMC-5040 Typical Performance (T
chuck = 25°C)
Figure 1. Gain, VDD=4.5 V, IDD=300 mA.
FREQUENCY (GHz)
GAIN
(dB)
20
45
25
30
35
40
30
26
22
18
14
10
Figure 2. Gain and Drain Voltage,
IDD=300 mA.
FREQUENCY (GHz)
GAIN
(dB)
35
30
25
20
15
10
5
0
20
45
35
30
25
40
3V
3.5V
4V
4.5V
5V
Figure 3. Input and Output Return Loss,
VDD=4.5V, IDD=300 mA.
FREQUENCY (GHz)
RETURN
LOSS
(dB)
0
-5
-10
-15
-20
-25
20
45
35
30
25
40
S11(dB)
S22(dB)
Figure 4. Gain and Drain Voltage,
IDD=350 mA.
FREQUENCY (GHz)
GAIN
(dB)
30
25
20
15
10
5
0
20
45
35
30
25
40
3.5V
4V
4.5V
5V
Figure 5. Gain and Drain Voltage, IDD=4.5V.
FREQUENCY (GHz)
GAIN
(dB)
35
30
25
20
15
10
5
0
20
45
35
30
25
40
150mA
200mA
250mA
300mA
350mA
400mA
Figure 6. Input Return Loss and Drain Voltage,
IDD=350 mA.
FREQUENCY (GHz)
INPUT
RETURN
LOSS
(dB)
0
-5
-10
-15
-20
-25
-30
20
45
35
30
25
40
3.5V
4V
4.5V
5V
RF Specifications [1,2] (V
DD = 4.5V, IDD (Q) = 300 mA, Z0 = 50Ω)
Symbol
Parameters and Test Conditions
Units
GHz
Broadband
Narrow Band Typical Performance
23– 40
21–24
27–29
37–40
40–45
Min.
Typ.
Typical
|S
21|
2
Small-signal Gain
dB
20
25
25.5
25
22.4
21.3
|S
21|
2
Small-signal Gain Flatness
dB
±1.5
±0.2
±0.4
±0.2
±1.2
RL
in
Input Return Loss
dB
15
17
18
21
17
RL
out
Output Return Loss
dB
8
11
10
14
13
P
-1dB
Output Power @ 1 dB Gain Compression
f = 22 GHz
dBm
20
22.5
21
20
P
-3dB
Output Power @ 3 dB Gain Compression,
f = 22 GHz
dBm
21
21.6
23.5
22.5
21.5
OIP3
Output 3rd Order Intercept Point,
f = 2 MHz, P
in = -8 dBm, f = 22 GHz
dBm
30
29
31
27
|S
12|
2
Isolation
dB
40
55
Notes:
1. Data measured in wafer form, T
chuck = 25°C.
2. 100% on-wafer RF test is done at frequency = 24, 27, 29, 37 and 40 GHz, except as noted.
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