參數(shù)資料
型號: AMMC-5618-W10
元件分類: 放大器
英文描述: 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 0.0362 X 0.0362 INCH, 0.004 INCH HEIGHT, DIE
文件頁數(shù): 1/8頁
文件大小: 460K
代理商: AMMC-5618-W10
AMMC - 5618
6 - 20 GHz Amplifier
Data Sheet
Description
Avago Technologies’ AMMC-568 6-20 GHz MMIC is an
efficient two-stage amplifier designed to be used as a
cascadable intermediate gain block for EW applications.
In communication systems, it can be used as a LO buffer,
or as a transmit driver amplifier. It is fabricated using a
PHEMT integrated circuit structure that provides excep-
tional efficiency and flat gain performance. During typi-
cal operation with a single 5-V supply, each gain stage is
biased for Class-A operation for optimal power output
with minimal distortion. The RF input and output have
matching circuitry for use in 50-W environments. The
backside of the chip is both RF and DC ground. This helps
simplify the assembly process and reduces assembly re-
lated performance variations and costs. For improved re-
liability and moisture protection, the die is passivated at
the active areas. The MMIC is a cost effective alternative
to hybrid (discrete FET) amplifiers that require complex
tuning and assembly processes.
Applications
Driver/Buffer in microwave communication systems
Cascadable gain stage for EW systems
Phased array radar and transmit amplifiers
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
Features
Frequency Range: 6 - 20 GHz
High Gain: 4.5 dB Typical
Output Power: 9.5 dBm Typical
Input and Output Return Loss: < -2 dB
Flat Gain Response: ± 0.3 dB Typical
Single Supply Bias: 5 V @ 07 mA
AMMC-5618 Absolute Maximum Ratings[1]
Symbol
Parameters/ Conditions
Units Min. Max.
V
D, VD2
Drain Supply Voltage
V
7
V
G
Optional Gate Voltage
V
-5
+
V
G2
Optional Gate Voltage
V
-5
+
I
D
Drain Supply Current
mA
70
I
D2
Drain Supply Current
mA
84
P
in
RF Input Power
dBm
20
T
ch
Channel Temp.
°C
+50
T
b
Operating Backside Temp.
°C
-55
T
stg
Storage Temp.
°C
-65
+65
T
max
Maximum Assembly Temp.
(60 sec max)
°C
+300
Note:
. Operation in excess of any one of these conditions may result in
permanent damage to this device.
Chip Size: 920 x 920 m (36.2 x 36.2 mils)
Chip Size Tolerance: ± 10m (±0.4 mils)
Chip Thickness: 100 ± 10m (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 m (3.1 x 3.1 mils or larger)
相關(guān)PDF資料
PDF描述
AMMC-5618-W50 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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相關(guān)代理商/技術(shù)參數(shù)
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