參數(shù)資料
型號(hào)： AMMC-5033-W10
廠商： AGILENT TECHNOLOGIES INC
元件分類： 放大器
英文描述： 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： 0.108 X 0.0516 INCH, 0.004 INCH HEIGHT, DIE
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 130K
代理商： AMMC-5033-W10
2
AMMC-5033 DC Specifications/Physical Properties [1]
AMMC-5033 RF Specifications [4, 5]
Tb = 25
°C, V
d1 = 3.5 V, Vd2 = 5 V, Id1(Q) = 280 mA, Id2(Q) = 500 mA, Zo = 50
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id1
First Stage Drain Supply Current
(Vd1=3.5 V, Vg1=Open, Vgg set for Id2 Typical)
mA
280
320
Id2
Second Stage Drain Supply Current
(Vd2=5 V, Vg1=Open, Vgg set for Id2 Typical)
V
500
Vgg
Gate Supply Operating Voltage
(Id1(Q) + Id2(Q) = 780 (mA))
V
-0.75
-0.6
-0.4
DET Bias
Detector Bias Voltage (Optional)
V
Vd2
θ
1(ch-bs)
First Stage Thermal Resistance [2]
(Backside Temperature, Tb = 25 °C)
°C/W
31
θ
2(ch-bs)
Second Stage Thermal Resistance [2, 3]
(Backside Temperature, Tb = 25 °C)
°C/W
19
Notes:
1. Backside temperature Tb=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (
θch-b) = 42°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
3. Channel-to-backside Thermal Resistance (
θch-b) = 24°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
Symbol
Parameters and Test
Conditions
Unit
Lower Band
Specifications
(17.7 - 21 GHz)
Mid Band
Specifications
(21 - 26.5 GHz)
Upper
Band Specifications
(26.5 - 32 GHz)
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Gain
Small-signal Gain [5]
dB
20
22
17.5
20
16.5
18.5
P-1dB
Output Power at 1dB
Gain Compression [6]
dB
23.5
25
25.5
27
25
26.5
P-3dB
Output Power at 3dB
Gain Compression [6]
dB
27
28
27
OIP3
Output Third Order
Intercept Point[6];
f
= 2 MHz; Pin=+2
dBm
27
29
29.5
32
29
32
RLin
Input Return Loss[5]
dB
11.5
13.5
11
13
11
13
RLout
Output Return Loss[5] dB
14
20
14
19
15
22
Isolation
Min. Reverse
Isolation
dB
47
48
46
Notes:
4. Data measured in wafer form Tb = 25°C.
5. 100% on-wafer RF test is done at frequency = 17.7, 21, 26.5 and 32 GHz.
6. 100% on-wafer test frequency =17.7, 26.5 and 32 GHz
相關(guān)PDF資料
PDF描述
AMMC-5033-W50 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-5040-W10 20000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-5040-W50 20000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-5618-W10 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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AMMC-5040 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:20-45 GHz GaAs Amplifier
AMMC-5040-W10 功能描述:射頻放大器 20 - 45 GHz 25 dB RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
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