參數(shù)資料
型號(hào)： AM49PDL640AG70NT
廠商： SPANSION LLC
元件分類： 存儲(chǔ)器
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 13 X 9 MM, FBGA-73
文件頁數(shù)： 43/69頁
文件大?。?/td> 491K
代理商： AM49PDL640AG70NT
November 20, 2003
Am49PDL640AG
41
P R E L I M I N A R Y
DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at
V
IH
.
Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
I
active while Embedded Erase or Embedded Program is in
progress.
2.
3.
4.
Automatic sleep mode enables the low power mode when
addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode
current is 200 nA.
Not 100% tested.
5.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
RESET# Input Load Current
V
CC
= V
CC max
; V
ID
= 12.5 V
V
OUT
= V
SS
to V
CC
, OE# = V
IH
V
CC
= V
CC max
35
μA
I
LO
Output Leakage Current
±
1.0
μA
I
CC1
V
CC
Active Read Current (Notes 1, 2)
CE# = V
IL
,
OE# = V
IH
, V
CC
= V
CC max
5 MHz
10
20
mA
10 MHz
25
45
I
CC2
V
CC
Active Write Current (Notes 2, 3)
CE# = V
IL
,
OE# = V
IH
, WE# = V
IL
CE#, RESET#, WP#/ACC = V
IO
±
0.3 V
RESET# = V
SS
±
0.3 V
V
IH
= V
IO
±
0.3 V;
V
IL
= V
SS
±
0.3 V
15
30
mA
I
CC3
V
CC
Standby Current (Note 2)
1
5
μA
I
CC4
V
CC
Reset Current (Note 2)
1
5
μA
I
CC5
Automatic Sleep Mode (Notes 2, 4)
1
5
μA
I
CC6
V
Active Read-While-Program Current
(Notes 1, 2)
CE# = V
IL
,
OE# = V
IH
Word
21
45
mA
I
CC7
V
Active Read-While-Erase Current
(Notes 1, 2)
CE# = V
IL
, OE# = V
IH
Word
21
45
mA
I
CC8
V
Active Program-While-Erase-
Suspended Current (Notes 2, 5)
CE# = V
IL
, OE# = V
IH
17
35
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2
V
CC
+0.3
V
V
HH
Voltage for ACC Program Acceleration
V
CC
= 3.0 V ± 10%
8.5
9.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 3.0 V
±
10%
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, V
CC
= V
CCS
I
OH
= –100 μA, V
CCf
= V
CCS
0.4
V
V
OH
Output High Voltage
V
IO
–0.1
V
I
OH
= –2.0 mA, V
CC
= V
CCS
2.4
V
V
LKO
Low V
CC
Lock-Out Voltage (Note 5)
2.3
2.5
V
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