參數(shù)資料
型號(hào)： AM49PDL127BH85IT
廠商： SPANSION LLC
元件分類： 存儲(chǔ)器
英文描述： 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 8 X 11.60 MM, FBGA-73
文件頁(yè)數(shù)： 62/86頁(yè)
文件大?。?/td> 588K
代理商： AM49PDL127BH85IT
60
Am49PDL127BH/Am49PDL129BH
December 16, 2003
A D V A N C E I N F O R M A T I O N
pSRAM DC & OPERATING CHARACTERISTICS
Notes:
1. V
CC
–1.0 V for a 10 ns pulse width.
2. V
CC
+1.0 V for a 10 ns pulse width.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
–1.0
1.0
μA
I
LO
Output Leakage Current
CE#1ps = V
IH
, CE2ps = V
IL
or OE# =
V
IH
or WE# = V
IL,
V
IO
= V
SS
to V
CC
–1.0
1.0
μA
I
CC1
s
Operating Current
Cycle time = Min., I
IO
= 0 mA, 100%
duty, CE#1ps = V
IL
, CE#2ps = V
IH
, V
IN
= V
IL
= V
IH
, t
RC
= Min
40
mA
I
CC2
s
Page Access Operating Current
Cycle time = Min., I
IO
= 0 mA, 100%
duty, CE#1ps = V
IL
, CE#2ps = V
IH
, V
IN
= V
IL
= V
IH
, t
PC
= Min
25
mA
V
OL
Output Low Voltage
I
OL
= 1.0 mA
0.4
V
V
OH
Output High Voltage
I
OH
= –0.5 mA
2
V
I
SB
Standby Current (CMOS)
CE#f1 = V
CCS
–0.2 V,
CE2 = V
CCS
= 0.2 V
70
μA
I
DSB
Deep Power-down Standby
CE2 = 0.2 V
5
μA
V
IL
Input Low Voltage
–0.3
(Note 1)
0.4
V
V
IH
Input High Voltage
2.4
V
CC
+ 0.3
(Note 2)
V
相關(guān)PDF資料
PDF描述
AM49PDL129BH 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS
AM49PDL129BH66IS 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS
AM49PDL129BH66IT 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS
AM49PDL129BH85IS 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS
AM49PDL129BH85IT 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS
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