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參數(shù)資料
| 型號： | AM49LV6408MT15IT |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | Stacked Multi-chip Package (MCP) 64 Mbit (4 M x 16 bit) Flash Memory and 8 Mbit (512K x 16-Bit) |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA69 |
| 封裝： | 10 X 8 MM, 1.20 MM HEIGHT, FBGA-69 |
| 文件頁數(shù)： | 60/63頁 |
| 文件大小： | 540K |
| 代理商： | AM49LV6408MT15IT |
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58
Am49LV6408M
November 5, 2003
A D V A N C E I N F O R M A T I O N
FLASH ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25×C, 3.0 V V
CC
. Programming specifications assume
that all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0 V worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
4. For 1-16 words programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word basis for a 16-word write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables
12
and
11
for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V one pin at a time.
BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
15
sec
Chip Erase Time
32
128
sec
Single Word Program Time (Note 3)
Word
100
μs
Accelerated Single Word Program Time
(Note 3)
Word
90
μs
Total Write Buffer Program Time (Note 4)
352
μs
Effective Write Buffer Program Time (Note
5)
Per Word
22
μs
Total Accelerated Effective Write Buffer
Program Time (Note 4)
282
μs
Effective Accelerated Write Buffer PRogram
Time (Note 4)
Word
17.6
μs
Chip Program Time
92
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
Fine-pitch BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
Fine-pitch BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
Fine-pitch BGA
3.9
4.7
pF
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| AM49PDL127AH61IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM |
| AM49PDL127AH70IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM |
| AM49PDL127AH70IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM |
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