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參數(shù)資料
| 型號： | AM49LV6408MT15IT |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | Stacked Multi-chip Package (MCP) 64 Mbit (4 M x 16 bit) Flash Memory and 8 Mbit (512K x 16-Bit) |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA69 |
| 封裝： | 10 X 8 MM, 1.20 MM HEIGHT, FBGA-69 |
| 文件頁數(shù)： | 47/63頁 |
| 文件大?。?/td> | 540K |
| 代理商： | AM49LV6408MT15IT |
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November 5, 2003
Am49LV6408M
45
A D V A N C E I N F O R M A T I O N
AC Characteristics
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. For 1–16 words programmed.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
5. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
Parameter
Speed Options
JEDEC
Std.
Description
10, 15
11
Unit
t
AVAV
t
AVWL
t
WC
t
AS
t
ASO
t
AH
Write Cycle Time (Note 1)
Min
100
110
ns
Address Setup Time
Min
0
ns
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
WHDX
t
DS
t
DH
t
OEPH
Data Setup Time
Min
45
ns
Data Hold Time
Min
0
ns
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
WHEH
t
WLWH
t
WHDL
t
CS
t
CH
t
WP
t
WPH
CE# Setup Time
Min
0
ns
CE# Hold Time
Min
0
ns
Write Pulse Width
Min
35
ns
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
352
μs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
22
μs
Accelerated Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
17.6
μs
Single Word/Byte Program Operation (Note 2,
5)
Word
Typ
100
Single Word/Byte Accelerated Programming
Operation (Note 2, 5)
Word
Typ
90
μs
t
WHWH2
t
WHWH2
t
VHH
t
VCS
t
BUSY
Sector Erase Operation (Note 2)
Typ
0.5
sec
V
HH
Rise and Fall Time (Note 1)
V
CC
Setup Time (Note 1)
WE# High to RY/BY# Low
Min
250
ns
Min
50
μs
Min
100
110
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM49PDL127BH66IT | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS |
| AM49PDL127BH85IS | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS |
| AM49PDL127BH85IT | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS |
| AM49PDL129BH | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS |
| AM49PDL129BH66IS | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM49PDL127AH | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM |
| AM49PDL127AH61IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM |
| AM49PDL127AH61IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM |
| AM49PDL127AH70IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM |
| AM49PDL127AH70IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM |
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