參數(shù)資料
型號(hào)： AM49LV128BMH11NS
廠商： SPANSION LLC
元件分類： 存儲(chǔ)器
英文描述： 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA64
封裝： 12 X 9 MM, FBGA-64
文件頁數(shù)： 25/98頁
文件大?。?/td> 1016K
代理商： AM49LV128BMH11NS
June 17, 2004
Am49LV128BM
23
Table 6.
System Interface String
Table 7.
Device Geometry Definition
Addresses (x16)
Data
Description
1Bh
0027h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
μs
1Fh
0007h
20h
0007h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0001h
Max. timeout for byte/word write 2
N
times typical
24h
0005h
Max. timeout for buffer write 2
N
times typical
25h
0004h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses (x16)
Data
Description
27h
0018h
Device Size = 2
N
byte
28h
29h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
00FFh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關(guān)PDF資料
PDF描述
AM49LV128BMH11NT 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMH15NS 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMH15NT 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BML11NS 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BML11NT 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM49LV128BMH11NT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMH15NS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BMH15NT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BML11NS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
AM49LV128BML11NT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*