參數(shù)資料
型號(hào): AM42BDS640AGTD8IT
廠商: SPANSION LLC
元件分類: 存儲(chǔ)器
英文描述: Circular Connector; No. of Contacts:13; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:11-35 RoHS Compliant: No
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA93
封裝: 8 X 11.60 MM, FBGA-93
文件頁數(shù): 5/72頁
文件大?。?/td> 1060K
代理商: AM42BDS640AGTD8IT
4
Am42BDS640AG
November 1, 2002
P R E L I M I N A R Y
Figure 24. Alternate Synchronous ProgramOperation Timngs..... 54
Figure 25. Chip/Sector Erase Command Sequence....................... 55
Figure 26. Accelerated Unlock Bypass ProgrammngTimng......... 56
Figure 27. Data#Polling Timngs (DuringEmbeddedAlgorithm... 57
Figure 28. Toggle Bit Timngs (DuringEmbeddedAlgorithm......... 57
Figure 29. Synchronous Data Polling Timngs/Toggle Bit Timngs. 58
Figure 30. Latency with Boundary Crossing................................... 59
Figure 31. Latency with Boundary Crossing
into Program/Erase Bank................................................................ 60
Figure 32. Example of Wait States Insertion (Standard
HandshakingDevice)...................................................................... 61
Figure 33. Back-to-Back Read/Write Cycle Timngs....................... 62
SRAM AC Characteristics . . . . . . . . . . . . . . . . . . 63
Read Cycle .............................................................................63
Figure 34. SRAMRead Cycle—Address Controlled....................... 63
Figure 35. SRAMRead Cycle......................................................... 64
Write Cycle .............................................................................65
Figure 36. SRAMWrite Cycle—WE#Control................................ 65
Figure 37. SRAMWrite Cycle—CE1#s Control............................. 66
Figure 38. SRAMWrite Cycle—UB#s and LB#s Control............... 67
Flash Erase And Programming Performance . 68
Flash Latchup Characteristics. . . . . . . . . . . . . . . 68
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 68
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 68
SRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 69
Figure 39. CE1#s Controlled Data Retention Mode....................... 69
Figure 40. CE2s Controlled Data Retention Mode......................... 69
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 70
FSC093—93-Ball Fine-Pitch Grid Array 8 x 11.6 mm............70
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 71
Revision A (May 20, 2002) .....................................................71
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AM42BDS640AGTD9IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
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AM42DL1612DB30IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
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