參數(shù)資料
型號(hào)： AM42BDS640AGBD8IT
廠(chǎng)商： SPANSION LLC
元件分類(lèi)： 存儲(chǔ)器
英文描述： Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA93
封裝： 8 X 11.60 MM, FBGA-93
文件頁(yè)數(shù)： 60/72頁(yè)
文件大?。?/td> 1060K
代理商： AM42BDS640AGBD8IT
November 1, 2002
Am42BDS640AG
59
P R E L I M I N A R Y
AC CHARACTERISTICS)
Notes:
1. RDY active with data (A18 = 0 in the Burst Mode Configuration Register).
2. RDY active one clock cycle before data (A18 = 1 in the Burst Mode Configuration Register).
3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device not crossing
a bank in the process of performing an erase or program.
Figure 30.
Latency with Boundary Crossing
CLK
Address (hex)
C60
C61
C62
C63
C63
C63
C64
C65
C66
C67
D60
D61
D62
D63
D64
D65
D66
D67
(stays high)
AVD#
RDY
Data
Address boundary occurs every 64 words, beginning at address
00003Fh (00007Fh, 0000BFh, etc.). Address 000000h is also a boundary crossing.
3C
3D
3E
3F
3F
3F
40
41
42
43
latency
RDY
latency
t
RACC
(Note 1)
(Note 2)
t
RACC
t
RACC
t
RACC
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AM42BDS640AGBD9I 制造商:Spansion 功能描述:COMBO 4MX16 FALSH + 1MX16 SRAM 1.8V 93FBGA - Trays
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AM42BDS640AGTC8IS 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
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