參數(shù)資料
型號(hào)： AM29DL320GT70WMF
廠商： SPANSION LLC
元件分類： DRAM
英文描述： For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
中文描述： 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝： 6 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
文件頁(yè)數(shù)： 51/58頁(yè)
文件大?。?/td> 1239K
代理商： AM29DL320GT70WMF
September 27, 2004
Am29DL320G
49
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 2.7 V (3.0 V for regulated devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table
13
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
5
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
28
sec
Byte Program Time
5
150
μs
Excludes system level
overhead (Note 5)
Accelerated Byte/Word Program Time
4
120
μs
Word Program Time
7
210
μs
Chip Program Time
(Note 3)
Byte Mode
21
63
sec
Word Mode
14
42
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料
PDF描述
AM29DL320GT70WDF For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GB70WDF For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GT70WDFN For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GB70WDFN For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GT70WMIN DIODE SCHOTTKY HEX COMMON-CATHODE 30V 250mW 0.57V-vf 200mA-IFM 30mA-IF 0.7uA-IR DFN1616-6 3K/REEL
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