參數(shù)資料
型號： AM29DL320GT70WMF
廠商： SPANSION LLC
元件分類： DRAM
英文描述： For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
中文描述： 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝： 6 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
文件頁數(shù)： 27/58頁
文件大?。?/td> 1239K
代理商： AM29DL320GT70WMF
September 27, 2004
Am29DL320G
25
mand sequence may be written to an address within a
bank that is either in the read or erase-suspend-read
mode. The autoselect command may not be written
while the device is actively programming or erasing in
the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the au-
toselect command. The bank then enters the autose-
lect mode. The system may read at any address within
the same bank any number of times without initiating
another autoselect command sequence:
■
A read cycle at address (BA)XX00h (where BA is
the bank address) returns the manufacturer code.
■
A read cycle at address (BA)XX01h in word mode
(or (BA)XX02h in byte mode) returns the device
code.
■
A read cycle to an address containing a sector ad-
dress (SA) within the same bank, and the address
02h on A7–A0 in word mode (or the address 04h on
A6–A-1 in byte mode) returns 01h if the sector is
protected, or 00h if it is unprotected. (Refer to
Table
2
for valid sector addresses).
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
Enter SecSi
TM
Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, sixteen-byte electronic serial
number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi
Sector command sequence. The device continues to
access the SecSi Sector region until the system is-
sues the four-cycle Exit SecSi Sector command se-
quence. The Exit SecSi Sector command sequence
returns the device to normal operation. The SecSi
Sector is not accessible when the device is executing
an Embedded Program or Embedded Erase algo-
rithm.
Table 13
shows the address and data require-
ments for both command sequences. See also
“SecSi
TM
(Secured Silicon) Sector Flash
Memory Region” for further information. Note that the
ACC function and unlock bypass modes are unavail-
able when the SecSi Sector is enabled.
Byte/Word Program Command Sequence
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Program-
ming is a four-bus-cycle operation. The program com-
mand sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is
not
required to provide further controls or
timings. The device automatically provides internally
generated program pulses and verifies the pro-
grammed cell margin.
Table 13
shows the address
and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Write Operation
Status section for information on these status bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored.
Note that a
hardware reset
immediately terminates the program
operation. The program command sequence should
be reinitiated once that bank has returned to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries.
A bit cannot be programmed
from “0” back to a “1.”
Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
DQ6 status bits to indicate the operation was success-
ful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram bytes or words to a bank faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
That bank then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass pro-
gram command, A0h; the second cycle contains the
program address and data. Additional data is pro-
grammed in the same manner. This mode dispenses
with the initial two unlock cycles required in the stan-
dard program command sequence, resulting in faster
total programming time.
Table 13
shows the require-
ments for the command sequence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the bank
address and the data 90h. The second cycle need
only contain the data 00h. The bank then returns to
the read mode.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
相關(guān)PDF資料
PDF描述
AM29DL320GT70WDF For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GB70WDF For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GT70WDFN For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GB70WDFN For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GT70WMIN DIODE SCHOTTKY HEX COMMON-CATHODE 30V 250mW 0.57V-vf 200mA-IFM 30mA-IF 0.7uA-IR DFN1616-6 3K/REEL
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