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參數(shù)資料
| 型號(hào)： | AM29BDS640GTD8WSI |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, FBGA-80 |
| 文件頁(yè)數(shù)： | 51/65頁(yè) |
| 文件大?。?/td> | 899K |
| 代理商： | AM29BDS640GTD8WSI |
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50
Am29BDS640G
October 31, 2002
A D V A N C E I N F O R M A T I O N
AC CHARACTERISTICS
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid
Address for reading status bits.
2. “In progress” and “complete” refer to status of program
operation.
3. A21–A12 are don’t care during command sequence
unlock cycles.
4. The Asynchronous programming operation is
independent of the Set Device Read Mode bit in the Burst
Mode Configuration Register.
Figure 22.
Alternate Asynchronous Program Operation Timings
OE#
CE#
Data
Addresses
AVD#
WE#
CLK
V
CC
555h
PD
t
AS
t
AVSW
t
AVHW
t
CHW
t
AH
t
WC
t
WPH
PA
t
VCS
t
WP
t
DH
t
CH
In
Progress
t
WHWH1
VA
Complete
VA
Program Command Sequence (last two cycles)
Read Status Data
t
DS
V
IH
V
IL
t
AVDP
A0h
t
CS
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