參數(shù)資料
型號(hào)： AM29BDS640GTD8WSI
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80
封裝： 11 X 12 MM, 0.80 MM PITCH, FBGA-80
文件頁數(shù)： 29/65頁
文件大小： 899K
代理商： AM29BDS640GTD8WSI
28
Am29BDS640G
October 31, 2002
A D V A N C E I N F O R M A T I O N
DQ7, or DQ6 and DQ2 together, to determine if a
sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on
these status bits.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard program operation. Refer to the
“Write Operation Status”
section for more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
“Autoselect Functions” section on page 13 and
“Autoselect Command Sequence” section on page 25
sections for details.
To resume the sector erase operation, the system must
write the Erase Resume command. The bank address
of the erase-suspended bank is required when writing
this command. Further writes of the Resume command
are ignored. Another Erase Suspend command can be
written after the chip has resumed erasing.
Figure 3.
Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note:
See
Table 14
for program command sequence.
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