參數(shù)資料
型號(hào): ADSP-21479BCPZ-1A
廠(chǎng)商: Analog Devices Inc
文件頁(yè)數(shù): 64/76頁(yè)
文件大?。?/td> 0K
描述: IC DSP SHARK 200MHZ 88LFCSP
標(biāo)準(zhǔn)包裝: 1
系列: SHARC®
類(lèi)型: 浮點(diǎn)
接口: DAI,DPI,EBI/EMI,I²C,SPI,SPORT,UART/USART
時(shí)鐘速率: 200MHz
非易失內(nèi)存: ROM(4Mb)
芯片上RAM: 5Mb
電壓 - 輸入/輸出: 3.30V
電壓 - 核心: 1.20V
工作溫度: -40°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 88-VFQFN 裸露焊盤(pán),CSP
供應(yīng)商設(shè)備封裝: 88-LFCSP-VQ(12x12)
包裝: 托盤(pán)
Rev. C
|
Page 67 of 76
|
July 2013
Thermal Diode
The processors incorporate thermal diode/s to monitor the die
temperature. The thermal diode is a grounded collector, PNP
bipolar junction transistor (BJT). The THD_P pin is connected
to the emitter, and the THD_M pin is connected to the base of
the transistor. These pins can be used by an external tempera-
ture sensor (such as ADM1021A or LM86 or others) to read the
die temperature of the chip.
The technique used by the external temperature sensor is to
measure the change in VBE when the thermal diode is operated
at two different currents. This is shown in the following
equation:
where:
n = multiplication factor close to 1, depending on process
variations
k = Boltzmann constant
T = temperature (°C)
q = charge of the electron
N = ratio of the two currents
The two currents are usually in the range of 10 μA to 300 μA for
the common temperature sensor chips available.
Table 60 contains the thermal diode specifications using the
transistor model.
V
BE
n
kT
q
------
In(N)
=
Table 60. Thermal Diode Parameters—Transistor Model1
Symbol
Parameter
Min
Typ
Max
Unit
IFW
2
Forward Bias Current
10
300
μA
IE
Emitter Current
10
300
μA
nQ
3, 4
Transistor Ideality
1.012
1.015
1.017
RT
Series Resistance
0.12
0.2
0.28
Ω
1 Analog Devices does not recommend operation of the thermal diode under reverse bias.
2 Analog Devices does not recommend operation of the thermal diode under reverse bias.
3 Specified by design characterization.
4 The ideality factor, nQ, represents the deviation from ideal diode behavior as exemplified by the diode equation: IC = IS × (e qVBE/nqkT – 1) where IS = saturation current,
q = electronic charge, VBE = voltage across the diode, k = Boltzmann constant, and T = absolute temperature (Kelvin).
5 The series resistance (RT) can be used for more accurate readings as needed.
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