
ADP1110
–13–
REV. 0
APPLICATION CIRCUITS
All-Surface-Mount, Single-Cell to 5 V Converter
This is a very simple, compact, low-part-count circuit that takes
a single alkaline 1.5 V cell input and produces a 5 V output.
The output current should be kept to 10 mA or less to conserve
battery life.
I
LIM
ADP1110-5
V
IN
SW1
SW2
4
SENSE
GND
5
SET
7
AO
6
NC
NC
L1
D1
1N5817
8
1
2
3
50μH
CTX50-4
+5V
10mA
15μF
C
ONE
ALKALINE
CELL
1.5V
Figure 30. All-Surface-Mount, Single-Cell to 5 V Converter
All-Surface-Mount, 3 V to 5 V Step-Up Converter
Similar to the previous circuit, this circuit takes a 3-volt input
and provides a 5 V output at 40 mA. As in the single-cell version,
the circuit is compact and uses only four external components.
I
LIM
V
IN
SW1
SW2
4
SENSE
GND
5
SET
7
AO
6
ADP1110-5
NC
NC
L1
8
1
2
3
220
3V
50μH
CTX50-4
+5V
40mA
10μF
C
TWO
ALKALINE
CELLS
D1
1N5817
Figure 31. All-Surface-Mount, 3 V to 5 V Step-Up
Converter
All-Surface-Mount, 9 V to 5 V Step-Down Converter
Featuring the same low parts count of the step-up design, this
circuit is the complement to the preceding one. The 220
resistor programs the current limit to around 600 mA.
I
LIM
V
IN
SW1
SW2
SENSE
GND
5
SET
7
AO
6
ADP1110-5
NC
NC
L1
D1
8
1
2
4
3
220
50μH
1N5817
+5V
40mA
10μF
C
9V
BATTERY
R
LIM
CTX50-4
Figure 32. All-Surface-Mount, 9 V to 5 V Step-Down
Converter
1.5 V to
6
5 V Dual-Output Step-Up Converter
This circuit works from a single 1.5 V cell and provides simulta-
neous outputs of +5 V and –5 V. The accuracy of the negative
output suffers slightly because of the extra diode drop of around
0.4 V.
I
LIM
ADP1110-5
V
IN
SW1
SW2
4
SENSE
GND
5
SET
7
AO
6
NC
NC
8
1
2
3
1.5V
L16
8μH
4.7μF
ONE
ALKALINE
CELL
4.7μF
+5V
3mA
–5V
3mA
NOTE: ALL DIODES 1N5818
4.7μF
CTX68-4
Figure 33. 1.5 V to
±
5 V Dual-Output Step-Up
Converter
All-Surface-Mount Flash Memory VPP Generator
Figure 34 shows a circuit that can generate the programming
voltage, VPP to program flash memory. The key components
are the MOSFET and the bipolar transistor. These two devices
form a switch that, when ON, allows the ADP1110 to power-up
and function as a step-up converter. The output is +12V at 120
mA. When the MOSFET switch is OFF, the output of the
circuit drops to just under +5 V thereby disabling the program-
ming capability.
Care should be taken so there is no short-circuit-current limiting
in the circuit in either operating mode.
I
LIM
V
IN
SW1
SW2
4
SENSE
GND
5
SET
7
AO
6
ADP1110-12
NC
NC
8
1
2
3
L1
50μH
10μF
C
LOGIC1 = PROGRAM
LOGIC0 = SHUTDOWN
D1
1N5818
CTX50-4
MMBT4403
1k
MMBF170
V
+12V
120mA
+5V
10k
Figure 34. All Surface-Mount Flash Memory VPP Generator