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參數(shù)資料
| 型號(hào)： | ABA3100S3TR |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | S3, SOIC-16 |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大小： | 502K |
| 代理商： | ABA3100S3TR |
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Data Sheet - Rev 2.6
04/2008
3
ABA3100
table 2: Absolute Minimum and Maximum Ratings
ElECtRICAl CHARACtERIStICS
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Notes:
1. Pins 1, 2, 3, 6, 7 and 8 should be AC-coupled. No external DC bias should
be applied.
2. Pin 9 should be AC-grounded. No external DC bias should be applied.
table 3: Operating Ranges
the device may be operated safely over these conditions; however, parametric
performance is guaranteed only over the conditions defined in the electrical
specifications.
ParaMeter
MIn
MaX
UnItS
Analog Supply (pins 11, 14)
0
+12
VDC
RF Power at Inputs (pins 2, 3,
6, 7)
-
+10
dBm
Storage Temperature
- 65
+150
°C
Soldering Temperature
-
260
°C
Soldering Time
-
5.0
Sec.
ParaMeter
MIn
tYP
MaX
UnItS
RF Input / Output Frequency
50
-
1000
MHz
Analog Supply: VDD (pins 11, 14)
+4.5
+5
+9
VDC
Case Temperature: TA
-40
-
+85
°C
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