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參數(shù)資料
| 型號： | AAT4900IJS-T1 |
| 廠商： | Advanced Analog Technology,lnc. |
| 英文描述： | Buffered Power Half-Bridge |
| 中文描述： | 緩沖功率半橋 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 323K |
| 代理商： | AAT4900IJS-T1 |
AAT4900
Buffered Power Half-Bridge
4900.2006.05.1.3
9
Gate Drive
When used as a MOSFET gate driver, the break-
before-make shoot-through protection significantly
reduces losses associated with the driver at high
frequencies. (See Figure 2.)
The low R
DS(ON)
of the output stage allows for a
high peak gate current and fast switching speeds.
A small package size facilitates close placement to
the power device for optimum switching perform-
ance. The logic level inputs (CLK and EN) are high
impedance inputs.
Gate Drive Current Ratings
An estimate of the maximum gate drive capability
with no external series resistor can be derived from
Equation 7. Note that the quiescent current varies
with the ambient temperature, frequency of opera-
tion, and input voltage. The graphs below display
the quiescent current and maximum gate charge
drive capability at 85°C ambient vs. frequency for
various input voltages.
Eq. 7:
The quiescent current was first measured over
temperature for various input voltages with no load
attached. Equation 7 was then used to derive the
maximum gate charge capability for the desired
maximum junction temperature. Q
G
is the gate
charge required to raise the gate of the load MOS-
FET to the input voltage. This value is taken from
the MOSFET manufacturer's gate charge curve.
Maximum Gate Charge Load @ 85
°
C
(Ambient T
J(MAX)
= 120
°
C)
1
10
100
1000
100
1000
10000
Frequency (kHz)
G
V
IN
= 5.0V
V
IN
= 5.5V
V
IN
= 4.2V
V
IN
= 2.7V
No Load Operating Current at 85
°
C Ambient
0.1
1
10
100
100
1000
10000
Frequency (kHz)
O
V
IN
= 2.7V
V
IN
= 5.5V
V
IN
= 5.0V
V
IN
= 4.2V
Q
G(MAX)
= F
·
V
Q
S
1
T
- T
JA
IN(MAX)
= 1MHz
·
190
°
C/W
·
4.2V
1
120
°
C - 85
°
C
= 40nC
Figure 2: AAT4900 Gate Drive Configuration.
EN
CLK
GND
IN
LX
AAT4900
+5V
Load
Circuit
Clock
Enable
Ground
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AAT4901 | 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:Buffered Power Full-Bridge |
| AAT4901IJS-1-T1 | 功能描述:MOSFET Buffered Power Full-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AAT4901IJS-2-T1 | 功能描述:MOSFET Buffered Power Full-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AAT4901IJS-3-T1 | 功能描述:MOSFET Buffered Power Full-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AAT4901IJS-4-T1 | 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:Buffered Power Full-Bridge |
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