參數資料
型號: AAT4900IJS-T1
廠商: Advanced Analog Technology,lnc.
英文描述: Buffered Power Half-Bridge
中文描述: 緩沖功率半橋
文件頁數: 3/13頁
文件大?。?/td> 323K
代理商: AAT4900IJS-T1
Absolute Maximum Ratings
1
T
A
= 25°C, unless otherwise noted.
Thermal Information
3
Symbol
Θ
JA
P
D
Description
Value
Units
Thermal Resistance (SOT23-5, SC70JW-8)
Power Dissipation (SOT23-5, SC70JW-8)
190
526
°C/W
mW
Symbol
Description
Value
Units
V
IN
IN to GND
EN, CLK to GND
OUT to GND
Maximum Continuous Switch Current
Operating Junction Temperature Range
ESD Rating
2
- HBM
Maximum Soldering Temperature (at Leads)
-0.3 to 6
-0.3 to 6
-0.3 to V
IN
+0.3
2
-40 to 150
4000
300
V
V
V
A
°C
V
°C
V
EN
, V
CLK
V
OUT
I
MAX
T
J
V
ESD
T
LEAD
AAT4900
Buffered Power Half-Bridge
4900.2006.05.1.3
3
1. Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional operation at condi-
tions other than the operating conditions specified is not implied. Only one Absolute Maximum Rating should be applied at any one time.
2. Human body model is a 100pF capacitor discharged through a 1.5k
Ω
resistor into each pin.
3. Mounted on a demo board.
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AAT4901IJS-1-T1 功能描述:MOSFET Buffered Power Full-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AAT4901IJS-2-T1 功能描述:MOSFET Buffered Power Full-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AAT4901IJS-3-T1 功能描述:MOSFET Buffered Power Full-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AAT4901IJS-4-T1 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:Buffered Power Full-Bridge