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參數(shù)資料
| 型號(hào)： | 9Q512K32 |
| 廠商： | Aeroflex Inc. |
| 英文描述： | UT9Q512K32 16Megabit SRAM MCM |
| 中文描述： | UT9Q512K32 16Megabit的SRAM億立方米 |
| 文件頁(yè)數(shù)： | 10/14頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | 9Q512K32 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)當(dāng)前第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
10
t
EFDX
Assumptions & Notes:
1. G < V
IL
(max). If G > V
IH
(min) then Qn(7:0) will be in three-state for the entire cycle.
2. Either En scenario above can occur.
3. G high for t
AVAV
cycle.
Figure 5b. SRAM Write Cycle 2: Chip Enable - Controlled Access
A(18:0)
Wn
En
Dn(7:0)
APPLIED DATA
En
Qn(7:0)
t
WLQZ
t
ETEF
t
WLEF
t
DVEF
t
AVAV
3
t
AVET
t
AVET
t
ETEF
t
EFAX
t
EFAX
or
Notes:
1. 50pF including scope probe and test socket capacitance.
2. Measurement of data output occurs at the low to high or high to low transition mid-point
(i.e., CMOS input = V
DD
/2).
90%
Figure 6. AC Test Loads and Input Waveforms
Input Pulses
10%
< 5ns
< 5ns
V
LOAD
= 1.55V
300 ohms
50pF
CMOS
0.5V
V
DD
-0.05V
10%
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| 9QA0-111-11-3.50 | 制造商:3M Electronic Products Division 功能描述:CABLE ASSY - Bulk |
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