參數(shù)資料
型號(hào): 934053500118
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 整流器
英文描述: 5 A, 45 V, SILICON, RECTIFIER DIODE
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 57K
代理商: 934053500118
Philips Semiconductors
Product specification
Rectifier diodes
PBYR1045CTD series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 40 V/ 45 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 10 A
Low thermal resistance
V
F ≤ 0.6 V
GENERAL DESCRIPTION
PINNING
SOT428
Dual
schottky
rectifier
diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in low voltage, high frequency
1
anode 1
switched mode power supplies.
2
cathode
1
The
PBYR1045CTD
series
is
supplied in the SOT428 surface
3
anode 2
mounting package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
40CTD
45CTD
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 108 C
-
40
45
V
I
O(AV)
Average rectified forward
square wave;
δ = 0.5;
-
10
A
current (both diodes
T
mb ≤ 127 C
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5;
-
10
A
current per diode
T
mb ≤ 127 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current per diode
t = 8.3 ms
-
110
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
k
a1
a2
13
2
1
2
3
tab
1 it is not possible to make connection to pin 2 of the SOT428 package
July 1998
1
Rev 1.200
相關(guān)PDF資料
PDF描述
934054040118 5 A, 40 V, SILICON, RECTIFIER DIODE
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