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參數(shù)資料
| 型號： | 934053980118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 20 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 934053980118 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYR1025D series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 20 V/ 25 V
Reverse surge capability
High thermal cycling performance
I
F(AV) = 10 A
Low thermal resistance
V
F ≤ 0.41 V
GENERAL DESCRIPTION
PINNING
SOT428
Schottky
rectifier
diodes
in
a
PIN
DESCRIPTION
surface mounting plastic envelope.
Intended for use as output rectifiers
1
no connection
in low voltage, high frequency
switched mode power supplies.
2
cathode
1
The PBYR1025D series is supplied
3
anode
in the SOT428 surface mounting
package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
20D
25D
V
RRM
Peak repetitive reverse
-
20
25
V
voltage
V
RWM
Working peak reverse
-
20
25
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 120 C
-
20
25
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 140 C
-
10
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 140 C
-
20
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current
t = 8.3 ms
-
110
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
k
a
tab
3
1
2
3
tab
1 It is not possible to make connection to pin 2 of the SOT428 package.
April 1998
1
Rev 1.000
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