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參數(shù)資料
| 型號： | 934006620112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 934006620112 |
October 1992
6
Philips Semiconductors
Product specication
UHF push-pull power MOS transistor
BLF548
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specied.
RF performance in a common source, push-pull, class-B test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
500
28
2 x 160
150
> 10
typ. 11
> 50
typ. 55
Ruggedness in class-B operation
The BLF548 is capable of withstanding a load mismatch
corresponding to VSWR = 10 through all phases under the
following conditions:
VDS = 28 V; f = 500 MHz at rated output power.
Fig.9
Power gain and efficiency as functions of
load power, typical values.
Class-B operation; VDS = 28 V; IDQ = 2 × 160 mA;
f = 500 MHz; ZL = 1.1 + j0.6 (per section).
handbook, halfpage
0
4
8
12
16
20
0
20
40
60
80
100
0
50
100
150
200
GP
(dB)
MRA527
PL (W)
η
D
η
D
(%)
Fig.10 Load power as a function of input power,
typical values.
Class-B operation; VDS = 28 V; IDQ = 2 × 160 mA;
f = 500 MHz; ZL = 1.1 + j0.6 (per section).
handbook, halfpage
0
40
80
120
160
200
010
20
30
MRA531
PL
(W)
PIN (W)
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