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參數(shù)資料
| 型號(hào)： | 934006620112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 123K |
| 代理商： | 934006620112 |
October 1992
3
Philips Semiconductors
Product specication
UHF push-pull power MOS transistor
BLF548
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specied.
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
±V
GS
gate-source voltage
20
V
ID
DC drain current
15
A
Ptot
total power dissipation
up to Tmb = 25 °C; total device; both
sections equally loaded
330
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL
RESISTANCE
Rth j-mb
thermal resistance from junction to
mounting base
Tmb = 25 °C; Ptot = 330 W;
total device; both sections equally loaded
0.5 K/W
Rth mb-h
thermal resistance from mounting
base to heatsink
total device; both sections equally loaded
0.15 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDS(on).
(2) Tmb = 25 °C.
Total device; both sections equally loaded.
handbook, halfpage
1
10
110
MRA997
102
(1)
ID
(A)
VDS (V)
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
50
100
150
200
250
300
350
400
0
20
40
60
80
100
120
(2)
(1)
MRA532
Ptot
(W)
Th (
oC)
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