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參數(shù)資料
| 型號(hào)： | 934003840126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | 934003840126 |
2001 May 18
3
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BS108
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10
× 10 mm.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
ID =10 A; VGS = 0
200
V
IDSS
drain-source leakage current
VDS = 160 V; VGS =0
1
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
±100
nA
VGSth
gate-source threshold voltage
ID = 1 mA; VGS =VDS
0.4
1.8
V
RDSon
drain-source on-state resistance
ID = 100 mA; VGS = 2.8 V
2.7
5
Yfs
transfer admittance
ID = 300 mA; VDS = 25 V
200
600
mS
Ciss
input capacitance
VDS =25V; VGS =0;
f = 1 MHz
100
120
pF
Coss
output capacitance
VDS =25V; VGS =0;
f = 1 MHz
20
30
pF
Crss
reverse transfer capacitance
VDS =25V; VGS =0;
f = 1 MHz
10
15
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 250 mA; VDD =50V;
VGS = 0 to 10 V
610
ns
toff
turn-off time
ID = 250 mA; VDD =50V;
VGS = 0 to 10 V
49
60
ns
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