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參數(shù)資料
| 型號(hào)： | 934003840126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | 934003840126 |
2001 May 18
2
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BS108
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
APPLICATIONS
Line current interruptor in telephone sets
Applications in relay, high-speed and line transformer
drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT54 (TO-92) package.
PINNING - SOT54
PIN
DESCRIPTION
1
source
2
gate
3
drain
Fig.1
Simplified outline (SOT54; TO-92) and
symbol.
handbook, halfpage
1
3
2
MAM150
s
d
g
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10
× 10 mm.
SYMBOL
PARAMETER
MAX.
UNIT
VDS
drain-source voltage (DC)
200
V
VGSth
gate-source threshold voltage
1.8
V
ID
drain current (DC)
300
mA
RDSon
drain-source on-state resistance
5
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
200
V
VGSO
gate-source voltage (DC)
open drain
±20
V
ID
drain current (DC)
300
mA
IDM
peak drain current
1.2
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1W
Tstg
storage temperature
55
+150
°C
Tj
junction temperature
150
°C
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