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參數(shù)資料
| 型號： | 72631 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 41K |
| 代理商： | 72631 |
Si7459DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72631
S-32678—Rev. A, 29-Dec-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1.0
-3.0
V
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
V
DS
= 0 V, V
GS
=
25
V
200
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
-1
A
V
DS
= -30 V, V
GS
= 0 V, T
J
= 70 C
-10
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V
-30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -22 A
0.0056
0.0068
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -22 A
50
S
Diode Forward Voltage
a
V
SD
I
S
= -2.9 A, V
GS
= 0 V
-0.71
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
113
170
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -22 A
17
nC
Gate-Drain Charge
Q
gd
32.5
Turn-On Delay Time
t
d(on)
25
40
Rise Time
t
r
= -15 V, R
V
= 15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
20
30
ns
Turn-Off Delay Time
t
d(off)
I
D
180
270
Fall Time
t
f
130
200
Gate Resistance
R
g
4
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.9 A, di/dt = 100 A/ s
100
150
ns
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 10 thru 5 V
25 C
T
C
= 125 C
-55 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
3 V
4 V
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