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參數(shù)資料
| 型號(hào)： | 72631 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | 72631 |
FEATURES
TrenchFET Power MOSFETS
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
Si7459DP
Vishay Siliconix
New Product
Document Number: 72631
S-32678—Rev. A, 29-Dec-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.0068 @ V
GS
= -10 V
-22
D
S
G
P-Channel MOSFET
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7459DP-T1 - E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
25
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-22
-13
T
A
= 70 C
-17
-10
A
Pulsed Drain Current
I
DM
-60
continuous Source Current (Diode Conduction)
a
I
S
-4.5
-1.6
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5.4
1.9
W
T
A
= 70 C
3.4
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
18
23
Steady State
52
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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