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參數(shù)資料
| 型號(hào)： | 72616 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 72616 |
Si7413DN
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
400 A
0.4
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
20 V, V
GS
= 0 V
1
A
V
DS
=
20 V, V
GS
= 0 V, T
J
= 85 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
=
4.5 V
30
A
V
GS
=
4.5 V, I
D
=
13.2 A
0.012
0.015
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
2.5 V, I
D
=
11.4 A
0.016
0.020
V
GS
=
1.8 V, I
D
=
3.5 A
0.023
0.029
Forward Transconductance
a
g
fs
V
DS
=
15
V, I
D
=
13.2 A
47
S
Diode Forward Voltage
a
V
SD
I
S
=
3.2 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
34
51
Gate-Source Charge
Q
gs
V
DS
=
10 V,
V
GS
=
4.5 V, I
D
=
13.2 A
5.4
nC
Gate-Drain Charge
Q
gd
8.8
Gate Resistance
R
g
f = 1 MHz
5
Turn-On Delay Time
t
d(on)
30
45
Rise Time
t
r
V
=
10 V, R
= 10
1 A, V
GEN
=
4.5 V, R
g
= 6
50
75
Turn-Off Delay Time
t
d(off)
I
D
200
300
ns
Fall Time
t
f
95
140
Source-Drain Reverse Recovery Time
t
rr
I
F
=
3.2 A, di/dt = 100 A/ s
35
55
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
0.00
5
10
15
20
25
30
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
5
10
15
20
25
30
0
1
2
3
4
5
V
GS
= 5 thru 2 V
25 C
T
C
= 125 C
1 V
55 C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
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