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參數(shù)資料
| 型號(hào)： | 72425 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 150-V (D-S) 175∑C MOSFET |
| 中文描述： | N溝道150 -五（副）175ΣCMOSFET的 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | 72425 |
SPICE Device Model SUP80N15-20L
Vishay Siliconix
www.vishay.com
2
Document Number: 72425
12-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.7
V
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
314
A
V
GS
= 10 V, I
D
= 30 A
0.016
0.016
V
GS
= 10 V, I
D
= 30 A, T
J
= 125°C
0.023
V
GS
= 10 V, I
D
= 30 A, T
J
= 175°C
0.026
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
0.017
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
93
S
Forward Voltage
a
Dynamic
b
V
SD
I
S
= 80 A, V
GS
= 0 V
0.92
1
V
Input Capacitance
C
iss
6590
6500
Output Capacitance
C
oss
510
520
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
320
270
Pf
Total Gate Charge
c
Q
g
114
110
Gate-Source Charge
c
Q
gs
21
21
Gate-Drain Charge
c
Q
gd
V
DS
= 50 V, V
GS
= 10 V, I
D
= 80 A
33
33
NC
Turn-On Delay Time
c
t
d(on)
176
20
Rise Time
c
t
r
43
100
Turn-Off Delay Time
c
t
d(off)
43
70
Fall Time
c
t
f
V
DD
= 50 V, R
L
= 0.93
I
D
80 A, V
GEN
= 10 V, R
G
= 2.5
49
135
Ns
Notes
a.
b.
c.
Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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