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參數資料
| 型號： | 71V416YL12PHG2 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, TSOP2-44 |
| 文件頁數： | 3/9頁 |
| 文件大?。?/td> | 206K |
| 代理商： | 71V416YL12PHG2 |
6.42
3
IDT71V416YS, IDT71V416YL 3.3V CMOS Static RAM
for Automotive Applications 4 Meg (256K x 16-Bit) Automotive Temperature Ranges
Absolute Maximum Ratings
(1)
Recommended Operating
Temperature and Supply
Voltage
Recommended DC Operating
Conditions
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
NOTE:
1. Refer to maximumovershoot/undershoot diagrambelow. The measured
voltage at device pin must not exceed half sinusoidal wave with 2V peak and
half period of 2ns.
Symbol
Rating
Value
Unit
V
DD
Supply Voltage Relative to
V
SS
-0.5 to +4.6
V
V
IN,
V
OUT
Termnal Voltage Relative to
V
SS
-0.5 to V
DD
+0.5
V
T
BIAS
Temperature Under Bias
-55 to +125
o
C
T
J
Junction Temperature Range
-40 to +150
o
C
T
STG
Storage Temperature
-65 to +150
o
C
P
T
Power Dissipation
1
W
I
OUT
DC Output Current
50
mA
6817 tbl 04
Grade
Temperature
V
SS
V
DD
Automotive Grade 1
-40°C to +125°C
0V
See Below
Automotive Grade 2
-40°C to +105°C
0V
See Below
Automotive Grade 3
-40°C to +85°C
0V
See Below
Automotive Grade 4
0°C to +70°C
0V
See Below
6817 tbl 05
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Supply Voltage
3.0
3.3
3.6
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
2.0
____
V
DD
+0.3
(1)
V
V
IL
Input LowVoltage
-0.3
(1)
____
0.8
V
6817 tbl 06
SOJ/TSOP Capacitance
(T
A
= +25°C, f = 1.0MHz)
NOTE:
1. This parameter is guaranteed by device characterization, but not production
tested.
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
7
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
8
pF
6817 tbl 02
48 BGA Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
6
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
7
pF
6817 tbl 02b
Maximum Overshoot/Undershoot
V
IL
V
IH
6817 drw 12
+2V
-2V
2ns
2ns
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